DocumentCode :
1300951
Title :
Polarization-Independent Photodetectors With Enhanced Responsivity in a Standard Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Process
Author :
Moll, N. ; Morf, T. ; Fertig, M. ; Stöferle, T. ; Trauter, B. ; Mahrt, R.F. ; Weiss, J. ; Pflüger, T. ; Brenner, K.-H.
Author_Institution :
Zurich Res. Lab., IBM Res., Ruschlikon, Switzerland
Volume :
27
Issue :
21
fYear :
2009
Firstpage :
4892
Lastpage :
4896
Abstract :
A polarization-independent photodetector device is demonstrated that can be combined with electronic integrated circuits on a single chip. The photodetector device is fully compatible with the standard silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) process without requiring process modification or postprocessing.
Keywords :
CMOS integrated circuits; integrated optoelectronics; light polarisation; photodetectors; silicon-on-insulator; CMOS process; Si-JkJk; complementary metal-oxide-semiconductor process; electronic integrated circuits; polarization-independent photodetector; standard silicon-on-insulator; Complementary metal–oxide–semiconductor (CMOS) integrated circuits; photodetectors; silicon-on-insulator (SOI) technology;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2009.2030343
Filename :
5208207
Link To Document :
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