Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories

Author

Irom, Farokh ; Nguyen, Duc N. ; Harboe-Sørensen, Reno ; Virtanen, Ari

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

58

Issue

5

fYear

2011

Firstpage

2477

Lastpage

2482

Abstract

Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories.

Keywords

NAND circuits; flash memories; logic gates; nuclear electronics; radiation effects; SEE susceptibility; TID degradation mechanism; TID response; heavy ion single event measurements; high density memories; multilevel flash technology; multilevel high density NAND flash memories; single event upsets; single level flash technology; single level high density NAND flash memories; total ionizing dose response; Ash; Computer architecture; Logic gates; Microprocessors; Radiation effects; Silicon; Threshold voltage; Floating gate; NAND flash; gamma rays; nonvolatile memory; single event effects; single event upset; total ionizing dose; x-ray;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2161885

Filename

5989879