A phenomenological approach to estimating transit times in GaAs HBTs

Author

Zhou, Haosheng ; Pulfrey, David L. ; Yedlin, Matthew J.

Author_Institution

Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada

Volume

37

Issue

10

fYear

1990

fDate

10/1/1990 12:00:00 AM

Firstpage

2113

Lastpage

2120

Abstract

A method is proposed for estimating transit times in heterojunction bipolar transistors (HBTs) which are fabricated from semiconductor materials in which the conduction band can be represented by a two-valley model. The transition times for exchange of electrons between the conduction band valleys are treated as phenomenological parameters and are shown to be linked by the electric field in the device. Incorporation of the transition rates into the continuity equations for upper and lower valley electrons yields a set of equations which can be solved under transient conditions to yield directly the transit times of carriers across the base and the base-collector space-charge region. Results from this approach are compared with Monte Carlo calculations and shown to exhibit good agreement

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; GaAs; HBTs; Monte Carlo calculations; base-collector space-charge region; conduction band valleys; continuity equations; electric field; estimating transit times; exchange of electrons; heterojunction bipolar transistors; phenomenological approach; semiconductors; transit times of carriers; transition rates; two-valley model; Electrons; Equations; Gallium arsenide; Helium; Heterojunction bipolar transistors; High performance computing; Monte Carlo methods; Region 3; Semiconductor materials; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.59899

Filename

59899