A high performance thin-film transistor using a low temperature poly-Si by silicide mediated crystallization

Author

Won Kyu Kwak ; Bong Rae Cho ; Soo Young Yoon ; Seong Jin Park ; Jin Jang

Author_Institution

Dept. of Phys., Kyung Hee Univ., Seoul, South Korea

Volume

21

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

107

Lastpage

109

Abstract

Electric field enhanced silicide mediated crystallization (SMC) was introduced for low-temperature polycrystalline silicon thin-film transistors (TFTs) on glass substrates. The amorphous silicon (a-Si) film having an average Ni thickness of 0.15 /spl Aring/, was completely crystallized at a temperature of 480/spl deg/C within 30 min in the presence of an electric field of 40 V/cm. The poly-Si is composed of needlelike crystallites with a few μm length and about 50 nm width. The poly-Si TFT using the SMC exhibited a field effect mobility of 86 cm²/Vs, a threshold voltage of -0.6 V, and a subthreshold slope of 0.6 V/dec.

Keywords

crystallisation; elemental semiconductors; silicon; thin film transistors; 480 C; NiSi; Si; amorphous silicon film; electric field; field effect mobility; glass substrate; low temperature growth; polycrystalline silicon thin film transistor; polysilicon TFT; silicide mediated crystallization; subthreshold slope; threshold voltage; Amorphous silicon; Crystallization; Glass; Semiconductor films; Silicides; Sliding mode control; Substrates; Temperature; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.823571

Filename

823571