Title :
A high performance thin-film transistor using a low temperature poly-Si by silicide mediated crystallization
Author :
Won Kyu Kwak ; Bong Rae Cho ; Soo Young Yoon ; Seong Jin Park ; Jin Jang
Author_Institution :
Dept. of Phys., Kyung Hee Univ., Seoul, South Korea
fDate :
3/1/2000 12:00:00 AM
Abstract :
Electric field enhanced silicide mediated crystallization (SMC) was introduced for low-temperature polycrystalline silicon thin-film transistors (TFTs) on glass substrates. The amorphous silicon (a-Si) film having an average Ni thickness of 0.15 /spl Aring/, was completely crystallized at a temperature of 480/spl deg/C within 30 min in the presence of an electric field of 40 V/cm. The poly-Si is composed of needlelike crystallites with a few μm length and about 50 nm width. The poly-Si TFT using the SMC exhibited a field effect mobility of 86 cm2/Vs, a threshold voltage of -0.6 V, and a subthreshold slope of 0.6 V/dec.
Keywords :
crystallisation; elemental semiconductors; silicon; thin film transistors; 480 C; NiSi; Si; amorphous silicon film; electric field; field effect mobility; glass substrate; low temperature growth; polycrystalline silicon thin film transistor; polysilicon TFT; silicide mediated crystallization; subthreshold slope; threshold voltage; Amorphous silicon; Crystallization; Glass; Semiconductor films; Silicides; Sliding mode control; Substrates; Temperature; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
