Gate oxide integrity of thermal oxide grown on high temperature formed Si/sub 0.3/Ge/sub 0.7/

Author

Wu, Y.H. ; Chin, Albert

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

21

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

113

Lastpage

115

Abstract

We have investigated the gate oxide integrity of thermal oxides direct grown on high temperature formed Si/sub 0.3/Ge/sub 0.7/. Good oxide integrity is evidenced by the low interface-trap density of 5.9/spl times/10/sup 10/ eV/sup -1/ cm/sup -2/, low oxide charge density of -5.6/spl times/10/sup 10/ cm/sup -2/, and the small stress-induced leakage current after -3.3 V stress for 10 000 s. The good gate oxide integrity is due to the high temperature formed and strain-relaxed Si/sub 0.3/Ge/sub 0.7/ that has a original smooth surface and stable after subsequent high temperature process.

Keywords

Ge-Si alloys; oxidation; semiconductor materials; Si/sub 0.3/Ge/sub 0.7/; gate oxide integrity; high temperature growth; interface trap density; oxide charge density; strain relaxation; stress-induced leakage current; thermal oxidation; Amorphous materials; Capacitive sensors; Electric breakdown; Germanium silicon alloys; Leakage current; MOSFET circuits; Rapid thermal processing; Silicon germanium; Temperature; Thermal degradation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.823573

Filename

823573