• DocumentCode
    1301280
  • Title

    High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier

  • Author

    Chang, C.S. ; Su, Y.K. ; Chang, S.J. ; Chang, P.T. ; Wu, Y.R. ; Huang, K.H. ; Chen, T.P.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    34
  • Issue
    1
  • fYear
    1998
  • fDate
    1/1/1998 12:00:00 AM
  • Firstpage
    77
  • Lastpage
    83
  • Abstract
    A novel chirped multiquantum barrier (CMQB) structure was used for AlGaInP light-emitting devices. We have theoretically studied the blocking efficiency of the CMQB structure and found that the CMQB structure is more effective in blocking the electron wave than the conventional uniform multiquantum barrier (UMQB) structure. AlGaInP light emitting diodes (LEDs) with the CMQB structure and the UMQB structure were both fabricated and compared. It was found that the luminescence intensity of the AlGaInP CMQB LED is larger and the intensity distribution of the AlGaInP CMQB LED is more uniform than the AlGaInP UMQB LED. The intensity-current measurement also shows that the electroluminescence intensity of the AlGaInP CMQB LED starts to saturate at a higher injection current
  • Keywords
    III-V semiconductors; aluminium compounds; chirp modulation; electro-optical modulation; electroluminescent devices; gallium compounds; indium compounds; light emitting diodes; optical fabrication; semiconductor epitaxial layers; semiconductor quantum wells; 573 nm; AlGaInP; blocking efficiency; chirped multiquantum barrier; electroluminescence intensity; electron wave; fabrication; high-brightness light emitting diode; injection current; intensity distribution; intensity-current measurement; light-emitting diode; luminescence intensity; uniform multiquantum barrier; Chemical vapor deposition; Chirp; Current measurement; Electrons; Leakage current; Light emitting diodes; Luminescence; Organic light emitting diodes; Photonic band gap; Temperature;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.655010
  • Filename
    655010