Title :
High performance 0.1 μm dynamic threshold MOSFET using indium channel implantation
Author :
Sun-Jay Chang ; Chun-Yen Chang ; Tien-Sheng Chao ; Tiao-Yuan Huang
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
3/1/2000 12:00:00 AM
Abstract :
We demonstrate a high-performance 0.1 μm dynamic threshold voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low V/sub th/ simultaneously, which results in an excellent performance for the indium-implanted DTMOS.
Keywords :
MOSFET; doping profiles; elemental semiconductors; indium; ion implantation; low-power electronics; silicon; 0.1 micron; 0.7 V; DTMOS; Si:In; body-effect-factor; channel implantation; dynamic threshold MOSFET; super-steep-retrograde profile; threshold voltage; ultra-low-voltage operations; Chaos; Dynamic voltage scaling; Energy consumption; Implants; Indium; Laboratories; MOSFET circuits; Power supplies; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
