• DocumentCode
    1301380
  • Title

    The push toward low voltage devices

  • Author

    Golio, Mike

  • Author_Institution
    Rockwell Collins, Cedar Rapids, IA, USA
  • Volume
    1
  • Issue
    1
  • fYear
    2000
  • fDate
    3/1/2000 12:00:00 AM
  • Firstpage
    38
  • Lastpage
    45
  • Abstract
    Since the early 1980s, increasing attention has been focused on the development and manufacture of low voltage and low power electronics. The motivation for this trend is multifaceted. For RF and microwave circuitry, the constraints implied by the low voltage imperative can be examined as they apply to every aspect of RF/microwave component development. The ultimate success of a low voltage and low power RF product strategy is affected by all of the following issues: materials technology (GaAs, Si, epitaxy, implant, heterojunctions); device technology (BJT, HBT, MESFET, MOSFET, HEMT); circuit technology (topology challenges for low voltage); and radio system design issues (architecture trends and low voltage). Of these factors, system architecture has the greatest potential impact
  • Keywords
    MMIC; integrated circuit design; integrated circuit technology; low-power electronics; GaAs; RF circuitry; Si; circuit technology; device technology; low power electronics; low voltage devices; materials technology; microwave circuitry; radio system design issues; system architecture; Epitaxial growth; Gallium arsenide; Implants; Low power electronics; Low voltage; Manufacturing; Materials science and technology; Microwave circuits; Microwave devices; Radio frequency;
  • fLanguage
    English
  • Journal_Title
    Microwave Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1527-3342
  • Type

    jour

  • DOI
    10.1109/6668.823826
  • Filename
    823826