DocumentCode :
1301392
Title :
Detuning characteristics and conversion efficiency of nearly degenerate four-wave mixing in a 1.5-μm traveling-wave semiconductor laser amplifier
Author :
Mukai, Takaaki ; Saitoh, Tadashi
Author_Institution :
NTT Basic Res. Labs., Tokyo, Japan
Volume :
26
Issue :
5
fYear :
1990
fDate :
5/1/1990 12:00:00 AM
Firstpage :
865
Lastpage :
875
Abstract :
The optical nonlinearity in a semiconductor laser gain medium is investigated through copropagating nearly degenerate four-wave mixing (NDFWM) in a 1.5-μm InGaAsP traveling-wave laser amplifier (TWA). The FWM signal output powers vary symmetrically with the sign of probe detuning with respect to the pump frequency, while the pump and probe output powers vary asymmetrically. The NDFWM conversion efficiency from the probe input to the FWM signal output is a maximum of 8.3 dB around zero detuning and has positive gain in the range of ±6 GHz. This demonstrates highly efficient nonlinear interaction due to both large optical gain and large third-order susceptibility. The NDFWM efficiency is also investigated in connection with the TWA gain saturation characteristics and is found to be a maximum for operation around the saturation intensity of the TWA
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; laser tuning; optical phase conjugation; semiconductor junction lasers; 1.5 micron; FWM signal output powers; III-V semiconductor; InGaAsP; conversion efficiency; gain saturation characteristics; nearly degenerate four-wave mixing; optical gain; optical nonlinearity; probe detuning; probe output powers; pump frequency; saturation intensity; semiconductor laser gain medium; third-order susceptibility; traveling-wave semiconductor laser amplifier; Nonlinear optics; Optical mixing; Optical pumping; Optical saturation; Power amplifiers; Power generation; Probes; Pump lasers; Semiconductor lasers; Semiconductor optical amplifiers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.55528
Filename :
55528
Link To Document :
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