• DocumentCode
    1301636
  • Title

    Ga0.51In0.49P/GaAs HEMT´s exhibiting good electrical performance at cryogenic temperatures

  • Author

    Chan, Yi-Jen ; Pavlidis, Dimitris ; Razeghi, Manijeh ; Omnes, Frank

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    37
  • Issue
    10
  • fYear
    1990
  • fDate
    10/1/1990 12:00:00 AM
  • Firstpage
    2141
  • Lastpage
    2147
  • Abstract
    The DC and microwave characteristics of Ga0.51In0.49P/GaAs HEMTs grown by metalorganic chemical vapor deposition (MOCVD) are presented. Devices with 1-μm-long gates show transconductances of 163 and 213 mS/mm at 300 and 77 K, respectively. Their maximum cutoff frequency is 17.8 GHz. Deep traps in the doped layer are evaluated at low temperature by the threshold voltage shift and current collapse phenomena. GaInP/GaAs HEMTs show no current collapse and have almost zero threshold voltage shift compared to AlGaAs/GaAs and InAlAs/InGaAs where the corresponding values are 0.5 and 0.25 V, respectively
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; solid-state microwave devices; vapour phase epitaxial growth; 1 micron; 17.8 GHz; 300 K; 77 K; DC characteristics; Ga0.51In0.49P-GaAs; MOCVD; cryogenic temperatures; current collapse phenomena; deep traps; electrical performance; maximum cutoff frequency; metalorganic chemical vapor deposition; microwave characteristics; semiconductors; threshold voltage shift; transconductances; Chemical vapor deposition; Cutoff frequency; Gallium arsenide; HEMTs; Indium compounds; MOCVD; MODFETs; Microwave devices; Temperature; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.59902
  • Filename
    59902
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1301636