Three-dimensional topography simulation model: etching and lithography

Author

Fujinaga, Masato ; Kotani, Norihiko ; Kunikiyo, Tatsuya ; Oda, Hidekazu ; Shirahata, Masayoshi ; Akasaka, Y.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

Volume

37

Issue

10

fYear

1990

fDate

10/1/1990 12:00:00 AM

Firstpage

2183

Lastpage

2192

Abstract

An etching model in which topography is derived by solving a modified diffusion equation is introduced. This model is simple and makes it possible to simulate three-dimensional (3-D) topography accurately and quickly. Based on this model, a 3-D topography simulator which can be applied in the development of photolithography and isotropic/anisotropic etching has been developed. With this simulator, it is possible to simulate the series processes and multilayer etching, such as contact hole and trench etching. By simulating photolithography, diffraction and standing-wave effects can be found clearly in the 3-D topography of the developed photoresist. In the case of an etching process which is restricted by diffusion, the dependence of the etch front topography on the window width of the mask is examined

Keywords

VLSI; digital simulation; electronic engineering computing; etching; integrated circuit technology; photolithography; 3-D topography; 3D topography simulation model; anisotropic etching; contact hole etching; developed photoresist; development of photolithography; diffraction effects; diffusion limited etching; etch front topography; etching model; isotropic etching; mask window width effects; modified diffusion equation; multilayer etching; series processes; standing-wave effects; trench etching; Anisotropic magnetoresistance; Chemicals; Computational modeling; Diffraction; Equations; Etching; Lithography; Resists; Surface topography; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.59908

Filename

59908