Title :
A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb
Author :
Longenbach, K.F. ; Beresford, R. ; Wang, W.I.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
10/1/1990 12:00:00 AM
Abstract :
A complementary heterojunction field effect transistor technology based on the InAs/AlSb/GaSb system is proposed. The structure is formed by the vertical integration of InAs n-channel and GaSb p-channel HFET devices. The superior transport properties of electrons in InAs and holes in GaSb and their band offsets to AlSb or AlSbAs yield devices with transconductances much greater than AlGaAs/GaAs n- and p-channel HFETs. It is shown that a complementary circuit fabricated from these devices could provide room-temperature performance up to six times greater than that predicted for AlGaAs/GaAs complementary circuits
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; field effect transistors; gallium compounds; indium compounds; C-HFETs; GaSb p-channel; InAs n-channel; InAs-AlSb-GaSb; band offsets; complementary HFETs; complementary circuit; complementary heterostructure field effect transistor; n-channel HFETs; p-channel HFETs; room-temperature performance; semiconductors; transconductances; transport properties of electrons in InAs; transport properties of holes in GaSb; vertical integration; Electron mobility; FETs; Gallium arsenide; HEMTs; Heterojunctions; Logic circuits; Logic devices; MODFET circuits; Threshold voltage; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
