Title :
Heterostructure FET model including gate leakage
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
10/1/1990 12:00:00 AM
Abstract :
An analytical model for heterostructure field effect transistors is presented. The model is in the framework of the gradual channel approximation and includes the effects of gate leakage, velocity saturation, and subthreshold conduction. The consideration of gate leakage makes this model particularly useful for application to enhancement-mode devices
Keywords :
field effect transistors; semiconductor device models; HFETs; analytical model; enhancement-mode devices; gate leakage; gradual channel approximation; heterostructure field effect transistors; subthreshold conduction; velocity saturation; Analytical models; Charge carriers; Current density; Electron emission; Electron mobility; FETs; Gate leakage; HEMTs; MODFETs; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
