DocumentCode
1301912
Title
Resistive-Switching Characteristics of 
for Nonvolatile Memory Applications
Author
Seong, Dong-jun ; Hassan, Musarrat ; Choi, Hyejung ; Lee, Joonmyoung ; Yoon, Jaesik ; Park, Ju-Bong ; Lee, Wootae ; Oh, Min-Suk ; Hwang, Hyunsang
Author_Institution
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume
30
Issue
9
fYear
2009
Firstpage
919
Lastpage
921
Abstract
A systematic study on the switching mechanism of an Al/ Pr0.7Ca0.3MnO3 (PCMO) device was performed. A polycrystalline PCMO film was deposited using a conventional sputtering method. A thin Al layer was introduced to induce a reaction with the PCMO, forming aluminum oxide (AlOx). Transmission electron microscopy analysis of the interface between Al and PCMO showed that resistive switching was governed by the formation and dissolution of AlOx. Some basic memory characteristics, such as good cycle endurance and data retention of up to 104 s at 125??C, were also obtained. It also showed excellent switching uniformity and high device yield.
Keywords
aluminium; praseodymium compounds; random-access storage; semiconductor switches; sputtering; transmission electron microscopy; Al-Pr0.7Ca0.3MnO3; interface switching; nonvolatile memory applications; polycrystalline PCMO film; resistance random access memory; resistive-switching characteristics; sputtering method; transmission electron microscopy analysis; $hbox{Al}/hbox{Pr}_{0.7}hbox{Ca}_{0.3}hbox{MnO}_{3}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2025896
Filename
5208369
Link To Document