Title :
Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT
Author :
Lin, S.H. ; Cheng, C.H. ; Chen, W.B. ; Yeh, F.S. ; Chin, Albert
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
In this letter, we report a low threshold voltage (V t) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness of only 0.63 nm. This was achieved by using Ni-induced solid-phase diffusion of SiO2-covered Ni/Sb that reduced the high-kappa dielectric interfacial reactions.
Keywords :
MOSFET; EOT; LaTiO; TaN; equivalent oxide thickness; high-kappa dielectric interfacial reactions; low-threshold-voltage n-MOSFET; self-aligned gate-first n-MOSFET; solid-phase diffusion; LaTiO; low $V_{t}$; solid-phase diffusion (SPD);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2027723
