• DocumentCode
    1301920
  • Title

    Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT

  • Author

    Lin, S.H. ; Cheng, C.H. ; Chen, W.B. ; Yeh, F.S. ; Chin, Albert

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    30
  • Issue
    9
  • fYear
    2009
  • Firstpage
    999
  • Lastpage
    1001
  • Abstract
    In this letter, we report a low threshold voltage (V t) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness of only 0.63 nm. This was achieved by using Ni-induced solid-phase diffusion of SiO2-covered Ni/Sb that reduced the high-kappa dielectric interfacial reactions.
  • Keywords
    MOSFET; EOT; LaTiO; TaN; equivalent oxide thickness; high-kappa dielectric interfacial reactions; low-threshold-voltage n-MOSFET; self-aligned gate-first n-MOSFET; solid-phase diffusion; LaTiO; low $V_{t}$; solid-phase diffusion (SPD);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2027723
  • Filename
    5208370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1301920