DocumentCode :
1302010
Title :
Optimization of the \\hbox {Al}_{2}\\hbox {O}_{3}/ \\hbox {GaSb} Interface and a High-Mobility GaSb pMOSFET
Author :
Nainani, Aneesh ; Irisawa, T. ; Ze Yuan ; Bennett, Brian R. ; Boos, J. Brad ; Nishi, Yoshio ; Saraswat, Krishna C.
Author_Institution :
Appl. Mater., Inc., Santa Clara, CA, USA
Volume :
58
Issue :
10
fYear :
2011
Firstpage :
3407
Lastpage :
3415
Abstract :
While there have been many demonstrations on n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) in III-V semiconductors showing excellent electron mobility and high drive currents, hole mobility in III-V p-channel MOSFETs (pMOSFETs) has traditionally lagged in comparison to silicon. GaSb is an attractive candidate for high-performance III-V pMOSFETs due to its high bulk hole mobility. We fabricate and study GaSb pMOSFETs with an atomic layer deposition Al2O3 gate dielectric and a self-aligned source/drain formed by ion implantation. The band offsets of Al2O3 on GaSb were measured using synchrotron radiation photoemission spectroscopy. The use of a forming gas anneal to passivate the dangling bonds in the bulk of the dielectric was demonstrated. The density of interface states Dit was measured across the GaSb band gap using conductance measurements, and a midband-gap Dit of 3 × 1011/cm2 eV was achieved. This enabled pMOSFETs with a peak hole mobility value of 290 cm2/Vs.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; electron mobility; elemental semiconductors; gallium compounds; ion implantation; photoemission; silicon; synchrotron radiation; Al2O3-GaSb; Si; atomic layer deposition; band offsets; electron mobility; gate dielectric; high bulk hole mobility; high drive currents; high mobility pMOSFET; high performance; ion implantation; synchrotron radiation photoemission spectroscopy; Aluminum oxide; Dielectrics; MOSFET circuits; MOSFETs; Photonic band gap; Semiconductor device measurement; Substrates; Atomic layer deposition (ALD); III–V p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs); gallium antimonide; hole mobility;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2162732
Filename :
5991939
Link To Document :
بازگشت