Title :
Solution-Processed Memristive Junctions Used in a Threshold Indicator
Author :
Tse Nga Ng ; Russo, Barbara ; Arias, A.C.
Author_Institution :
Electron. Mater. & Device Lab., Palo Alto Res. Center, Palo Alto, CA, USA
Abstract :
Inkjet-patterned memristive metal/oxide/metal structures were characterized to infer ionic and electronic transport parameters such as mobility and ion distribution. The conductance change with respect to voltage and time was measured for an individual crossbar junction and for junctions that are connected in series. It was found that continuous dopant redistribution during voltage scans led to a peak in conductance. The mutable conductance of memristive devices was utilized to demonstrate a threshold indicator, in which the crossbar junctions were connected with a piezo sensor input and an electrophoretic display output. The memristive circuit would switch the color of display pixels, depending on the number of input pulses sensed by the piezo. The threshold indicator demonstrates that memristive junctions can be used as integral control switches. It is composed of passive circuit components and does not require an external battery.
Keywords :
electrophoretic displays; indicators; memristors; switches; continuous dopant redistribution; crossbar junction; display pixels; electrophoretic display output; inkjet-patterned memristive structures; integral control switches; ion distribution; memristive circuit; metal/oxide/metal structures; mobility; passive circuit components; piezo sensor input; solution-processed memristive junctions; threshold indicator; voltage scans; Current measurement; Electrodes; Junctions; Switches; Time measurement; Titanium; Voltage measurement; Memristive device; printed electronics; resistive switch; solgel titanium dioxide;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2162334