Title :
Multilayer n-Type Organic Metal-Base Transistor
Author :
Yusoff, A.R.B.M. ; Song, Yuning ; Schulz, Dirk ; Holz, E. ; Shuib, S.A.
Author_Institution :
Dept. de Fis., Univ. Fed. do Parana, Paraná, Brazil
Abstract :
We have studied the effects of the fullerene C70 on the device performance of a composite-emitter multilayer metal-base transistor (MBT). It is shown that the higher molecular weight leads to high common-emitter current gain β of over 252 in a wide range of collector-emitter voltage. By selecting an appropriate maximum and minimum base current IB, an on-to-off current ratio 4.73 × 106 is achieved. This is a substantial improvement over an identical MBT employing C60 having β = 8 and on-to-off current ratio 4.25.
Keywords :
bipolar transistors; fullerene devices; collector-emitter voltage; composite-emitter multilayer metal-base transistor; multilayer n-type organic metal-base transistor; on-to-off current ratio; Current measurement; Integrated circuits; Leakage current; Magnetic devices; Magnetic multilayers; Temperature measurement; Transistors; Bipolar transistor; fullerene; metal-base transistor (MBT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2162733