DocumentCode :
1302028
Title :
Increase in Reverse Operation Limit by Barrier Height Control of Diamond Schottky Barrier Diode
Author :
Umezawa, Hitoshi ; Tatsumi, Natsuo ; Shikata, Shin-Ichi ; Ikeda, Kazuhiro ; Kumaresan, Ramanujam
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Volume :
30
Issue :
9
fYear :
2009
Firstpage :
960
Lastpage :
962
Abstract :
Diamond is a promising material for high-power and low-loss semiconductor devices. However, the reported reverse blocking electric field of diamond-based power devices is as low as 2 MV/cm, and their performance is worse than ideal. We have developed reach-through-type Schottky barrier diodes (SBDs) with various Schottky barrier heights (SBHs) by changing metals. SBDs with high SBH show low leakage current and high operation limit of 3.1 MV/cm. This indicates that the reverse operation limit of diamond SBDs is determined not by leakage through defects but by carrier transport through the barrier. Reduction of specific on-resistance increases Baliga´s figure of merit to 51 MW/cm2, which is tenfold higher than the Si limit.
Keywords :
Schottky barriers; Schottky diodes; diamond; leakage currents; barrier height control; diamond Schottky barrier diode; high-power semiconductor devices; low leakage current; low-loss semiconductor devices; on-resistance reduction; reverse blocking electric field; Baliga´s figure of merit; Schottky barrier diode (SBD); diamond; operation limit; reach through; reverse leakage current;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2026439
Filename :
5208391
Link To Document :
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