A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

We present a dc model to simulate the static performance of electrolyte-gated organic field-effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed from voltage-dependent electric-double-layer capacitance. The voltage-dependent contact effect and short-channel effect are also taken into account in this model. A straightforward and efficient methodology is presented to extract the model parameters. The versatility of this model is discussed as well. The model is verified by the good agreement between simulation and experimental data.