Title :
Thermal stability of IGBT high-frequency operation
Author :
Sheng, Kuang ; Finney, Stephen J. ; Williams, Barry W.
Author_Institution :
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
fDate :
2/1/2000 12:00:00 AM
Abstract :
Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBTs at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits
Keywords :
insulated gate bipolar transistors; snubbers; switching circuits; thermal analysis; thermal stability; IGBT high-frequency operation; high frequency operation; high-frequency insulated gate bipolar transistor; maximum junction temperature; nonpunch-through IGBT; punch-through IGBT; snubber circuits; soft-switching circuits; thermal runaway; thermal stability; Charge carrier processes; Frequency; Insulated gate bipolar transistors; Power semiconductor switches; Snubbers; Switching loss; Temperature; Thermal engineering; Thermal stability; Voltage;
Journal_Title :
Industrial Electronics, IEEE Transactions on
