DocumentCode
1302190
Title
Layout-Aware Multi-Cell Upsets Effects Analysis on TMR Circuits Implemented on SRAM-Based FPGAs
Author
Sterpone, Luca ; Violante, Massimo ; Panariti, Alessandro ; Bocquillon, A. ; Miller, Florent ; Buard, Nadine ; Manuzzato, Andrea ; Gerardin, Simone ; Paccagnella, Alessandro
Author_Institution
Politec. di Torino, Torino, Italy
Volume
58
Issue
5
fYear
2011
Firstpage
2325
Lastpage
2332
Abstract
Multiple Cell Upsets (MCUs) are becoming a growing concern with the advent of the newest FPGA devices. In this paper we present a methodology suitable for analyzing the sensitivity of circuits implemented in SRAM-based FPGAs, and adopting the TMR mitigation scheme. Data about the layout of the adopted FPGA are obtained by means of laser testing. Then static analysis algorithm uses the collected data to predict the impact of MCUs on designs implemented on SRAM-based FPGAs. Thanks to this approach MCUs affecting physically adjacent cells are considered, only. We report data focusing on a Virtex-II device, showing the capabilities of the proposed method.
Keywords
SRAM chips; field programmable gate arrays; SRAM-based FPGA; TMR circuits; TMR mitigation scheme; Virtex-II device; laser testing; layout-aware multicell upsets effect analysis; static analysis algorithm; triple modular redundancy; Computer architecture; Field programmable gate arrays; Laser theory; Microprocessors; Random access memory; Testing; Tunneling magnetoresistance; Analytical analysis; FPGA; TMR; multiple cell upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2161887
Filename
5991971
Link To Document