Title :
Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors
Author :
Jiménez, David ; Miranda, Enrique ; Godoy, Andrés
Author_Institution :
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain
Abstract :
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance (NC) region could act as a step-up converter of the surface potential in a metal-oxide-semiconductor structure, opening a new route for the realization of transistors with steeper subthreshold characteristics (S <; 60mV/dec). In this paper, a comprehensive physics-based surface potential and a drain current model for the NC field-effect transistor are reported. The model is aimed to evaluate the potentiality of such transistors for low-power switching applications. This paper also sheds light on how operation in the NC region can be experimentally detected.
Keywords :
ferroelectric materials; field effect transistors; low-power electronics; semiconductor device models; drain current; ferroelectric material; negative capacitance field-effect transistors; steeper subthreshold; surface potential; Analytical models; Capacitance; Electric potential; Ferroelectric materials; Logic gates; Physics; Transistors; Field-effect transistors (FETs); low-power switching; metal–ferroelectric–semiconductor (MFS) devices; negative capacitance (NC) devices; nonvolatile memories; steeper subthreshold transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2062188
