• DocumentCode
    1302224
  • Title

    Efficient inclusive analytical model for delay estimation of multi-walled carbon nanotube interconnects

  • Author

    Gholipour, Morteza ; Masoumi, Nasser

  • Author_Institution
    Adv. VLSI Lab., Univ. of Tehran, Tehran, Iran
  • Volume
    6
  • Issue
    4
  • fYear
    2012
  • fDate
    7/1/2012 12:00:00 AM
  • Firstpage
    252
  • Lastpage
    259
  • Abstract
    Multi-walled carbon nanotubes (MWCNTs) have attracted much attention as very large scale integration (VLSI) chip interconnects, because of their high-current densities and excellent thermal and mechanical properties. This study investigates different aspects of the use of MWCNTs as chip routing wires to seek modern technologies for high-performance interconnects. Mathematical analyses, and simulations were made for MWCNT and Cu at global, intermediate and local interconnect levels. The authors propose a semi-analytical delay estimation model along with an equivalent RC model for MWCNT global interconnects. The results obtained from these models show good conformance with the simulation results. The proposed compact semi-analytical model can be used to perform fast analysis of MWCNT global interconnects, including delay, buffer insertion and crosstalk. The authors exploited their model to investigate the impact of buffer insertion on MWCNT interconnect delay. The optimal number of required buffers is estimated, as it minimises the MWCNT propagation delay. Analytical and simulation results show that the MWCNT interconnects require lower number of buffers compared to Cu wires.
  • Keywords
    VLSI; carbon nanotubes; current density; delay estimation; integrated circuit interconnections; integrated circuit modelling; mechanical properties; thermal properties; MWCNT interconnect delay; MWCNT propagation delay; VLSI chip interconnect; buffer insertion; chip routing wires; copper wires; crosstalk; current densities; equivalent RC model; global interconnect level; high-performance interconnects; intermediate interconnect level; local interconnect level; mathematical analysis; mechanical properties; multiwalled carbon nanotube interconnect; semianalytical delay estimation model; thermal properties; very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds.2011.0283
  • Filename
    6315725