1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser

Author

Huffaker, D.L. ; Deng, H. ; Deepe, D.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

10

Issue

2

fYear

1998

Firstpage

185

Lastpage

187

Abstract

Low-threshold lasing is achieved at 1.154 μm for an oxide-confined quantum-dot (QD) vertical-cavity surface-emitting laser (VCSEL) grown on a GaAs substrate. The long wavelength emission is obtained through use of an InAs-GaAs QD active region. A continuous-wave (CW) threshold of 502 μA is obtained for a device size of 10-μm diameter, corresponding to a threshold current density of 640 A/cm².

Keywords

III-V semiconductors; current density; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 1.154 mum; 10 mum; 502 muA; GaAs; GaAs substrate; InAs-GaAs; InAs-GaAs QD active region; VCSEL; continuous-wave threshold; device size; long wavelength emission; low-threshold lasing; oxide-confined quantum-dot vertical-cavity surface-emitting laser; threshold current density; Distributed Bragg reflectors; Fiber lasers; Gallium arsenide; Laser modes; Optical surface waves; Quantum dots; Semiconductor lasers; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.655352

Filename

655352