Title :
On the scaling property of trench isolation capacitance for advanced high-performance ECL circuits
Author :
Lu, P.F. ; Chuang, C.T.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
10/1/1990 12:00:00 AM
Abstract :
A detailed study on the scaling property of trench isolation capacitance for advanced high-performance bipolar applications is presented. It is shown that the trench isolation capacitance depends on the trench structure, particularly the trench bottom and the trench fill. The dependence of the trench isolation capacitance on the trench width is analyzed for various commonly used trench structures. The impact on scaled-down high-performance emitter-coupled logic (ECL) circuits is presented
Keywords :
VLSI; bipolar integrated circuits; emitter-coupled logic; integrated circuit technology; integrated logic circuits; semiconductor device models; advanced high-performance ECL circuits; emitter-coupled logic; modelings; scaled-down; scaling property; trench bottom; trench fill; trench isolation capacitance; trench structure; trench width; Circuits; Conducting materials; Delay effects; Electron devices; Isolation technology; Parasitic capacitance; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
