Title :
An over 10-Gb/s transmission experiment using a p-type delta-doped InGaAs-GaAs quantum-well vertical-cavity surface-emitting laser
Author :
Hatori, N. ; Mizutani, A. ; Nishiyama, N. ; Matsutani, Akihiro ; Sakaguchi, T. ; Motomura, F. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We have fabricated a p-type delta-doped InGaAs-GaAs quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) with a low-resistance GaAs-AlAs distributed Bragg reflector (DBR). The threshold was as low as 700 μA for 10×10 μm2 devices. A penalty-free 10-Gb/s transmission experiment with a 100-m-long multimode fiber was performed using fabricated VCSELs. The modulation speed was up to 12 Gb/s, which was limited by an RC constant. Further threshold reduction and high-speed operation can be expected by controlling the doping concentration in p-type delta-doped layers.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; doping profiles; gallium arsenide; indium compounds; laser cavity resonators; laser cavity resonators5833511; laser feedback; laser modes; laser theory; optical chaos; optical fibre communication; optical transmitters; quantum well lasers; semiconductor doping; surface emitting lasers; 10 Gbit/s; 10 mum; 100 m; 12 Gbit/s; 700 muA; GaAs-AlAs; InGaAs-GaAs; QW VCSEL; RC constant; doping concentration; high-speed operation; low-resistance GaAs-AlAs distributed Bragg reflector; modulation speed; multimode fiber; over 10-Gb/s transmission experiment; p-type delta-doped InGaAs-GaAs quantum-well vertical-cavity surface-emitting laser; penalty-free 10-Gb/s transmission experiment; threshold; Bandwidth; Data communication; Distributed Bragg reflectors; Fiber lasers; Optical interconnections; Quantum well lasers; Quantum wells; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
