Title :
Modeling the reverse base current phenomenon due to avalanche effect in advanced bipolar transistors
Author :
Liou, J.J. ; Yuan, J.S.
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
10/1/1990 12:00:00 AM
Abstract :
A model of reverse base current characteristics which is based on device physics is presented. The model requires only physical parameters, thus allowing circuit designers to estimate the device performance under avalanche operation prior to the actual device fabrication. Previously reported experimental data are included in support of the model
Keywords :
bipolar transistors; semiconductor device models; advanced bipolar transistors; avalanche effect; avalanche operation; device performance; device physics; model; physical parameters; reverse base current characteristics; reverse base current phenomenon; Bipolar transistors; Capacitance; Carbon capture and storage; Circuits; Degradation; Delay; Electron devices; Isolation technology; Numerical simulation; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
