DocumentCode
1302411
Title
A planar slab-waveguide photodiode with a pseudowindow region in front of the waveguide
Author
Takeuchi, Takeshi ; Makita, Kikuo ; Taguchi, Kenko
Author_Institution
Opto-Electron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
Volume
10
Issue
2
fYear
1998
Firstpage
255
Lastpage
257
Abstract
A planar waveguide photodiode having a selectively diffused p-n-junction with a simple pseudowindow region has been developed for access network applications. By forming the p-n-junction away from the input facet of the diode, the input facet is kept in neutral under the reverse-bias condition. We expect the facet degradation to be significantly suppressed in this structure. An extremely low dark current of less than 3 pA and sufficient bandwidth of over 4 GHz were confirmed.
Keywords
optical communication equipment; optical planar waveguides; optical waveguide components; p-n heterojunctions; photodiodes; thermal diffusion; 3 muA; 4 GHz; access network applications; extremely low dark current; facet degradation; input facet; p-n-junction; planar slab-waveguide photodiode; pseudowindow region; reverse-bias condition; selectively diffused p-n-junction; Absorption; Assembly; Bandwidth; Dark current; Degradation; Optical receivers; Optical waveguides; P-n junctions; Photodiodes; Planar waveguides;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.655376
Filename
655376
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