Resonant cavity enhanced heterojunction phototransistors based on GaInAsSb-AlGaAsSb grown by molecular beam epitaxy

Author

Yan Shi ; Zhao, J.H. ; Sarathy, J. ; Olsen, G.H. ; Hao Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

Volume

10

Issue

2

fYear

1998

Firstpage

258

Lastpage

260

Abstract

Conventional and resonant cavity enhanced heterojunction phototransistors (RCE-HPT) based on GaInAsSb-AlGaAsSb grown by molecular beam epitaxy (MBE) have been successfully fabricated and characterized for the first time to operate at near 2.2-μm wavelength range at room temperature (RT). By incorporating a ten-pair lattice matched AlAsSb-GaSb quarter wavelength reflector, a strong cavity enhancement of the photoresponse at the resonant wavelength has been realized. A factor of 3.8 improvement in the absolute responsivity and an optical gain of 2.2 at the resonant wavelength of 2.16 μm at RT have been measured from the RCE-HPT.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; infrared detectors; optical resonators; phototransistors; semiconductor heterojunctions; 2.2 mum; AlAsSb-GaSb; GaInAsSb-AlGaAsSb; MBE; absolute responsivity; molecular beam epitaxy; optical gain; photoresponse; resonant cavity enhanced heterojunction phototransistors; resonant wavelength; room temperatur; strong cavity enhancement; ten-pair lattice matched AlAsSb-GaSb quarter wavelength reflector; Absorption; Heterojunctions; High speed optical techniques; Lattices; Molecular beam epitaxial growth; Optical sensors; Photodetectors; Phototransistors; Quantum well devices; Resonance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.655377

Filename

655377