Title :
Nanosecond magnetization reversal in high coercivity thin films
Author :
Rizzo, N.D. ; Silva, T.J. ; Kos, A.B.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Abstract :
We used a wide-field Kerr microscope to measure magnetization reversal in high coercivity thin film media that were subjected to nanosecond field pulses. Coplanar waveguides were used as a field source. Two different samples of CoCr10Ta4 were measured. Sample A had a coercivity of 83 kA/m and sample B had a coercivity of 167 kA/m. For sample A, we find that after a step change in H, the magnetization initially relaxes exponentially with a time constant of 5 ns, and then relaxes logarithmically. We interpret this result as indicating a transition from dynamic reversal to thermal relaxation. In higher fields, the exponential relaxation time decreases according to τ=Sw/(H-H0), where Sw=29.7 μs·A·m-1 (373 ns·Oe). For sample B, only logarithmic relaxation is observed, implying that the dynamic magnetization response time is subnanosecond. We observe correlated regions of reversed magnetization in our Kerr images of sample A with a typical correlation length of 1 μm along the applied field direction. We propose a microscopic model of nucleation and growth of reversed regions by analogy to viscous domain wall motion.
Keywords :
chromium alloys; cobalt alloys; coercive force; coplanar waveguides; ferromagnetic materials; hard discs; magnetic domain walls; magnetic thin film devices; magnetisation reversal; tantalum alloys; CoCr10Ta4; applied field direction; coplanar waveguides; correlation length; dynamic magnetization response time; exponential relaxation time; high coercivity thin films; logarithmic relaxation; nanosecond magnetization reversal; nucleation; thermal relaxation; time constant; viscous domain wall motion; wide-field Kerr microscope; Coercive force; Delay; Magnetic domain walls; Magnetic field measurement; Magnetic force microscopy; Magnetization reversal; NIST; Pulse measurements; Saturation magnetization; Transistors;
Journal_Title :
Magnetics, IEEE Transactions on