DocumentCode :
1302834
Title :
A Novel Low Area Overhead Direct Adaptive Body Bias (D-ABB) Circuit for Die-to-Die and Within-Die Variations Compensation
Author :
Mostafa, Hassan ; Anis, Mohab ; Elmasry, Mohamed
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Volume :
19
Issue :
10
fYear :
2011
Firstpage :
1848
Lastpage :
1860
Abstract :
A direct adaptive body bias (D-ABB) circuit is proposed in this paper. The D-ABB is used to compensate for die-to-die (D2D) and within-die (WID) parameter variations, and accordingly, improves the circuit yield regarding the speed, the dynamic power, and the leakage power. The D-ABB circuit consists of threshold voltage estimation circuits and direct control of the body bias performed by on-chip direct controller circuits. Circuit level simulation results of a circuit block case study, extracted from a real microprocessor critical path, referring to an industrial hardware-calibrated 65-nm CMOS technology transistor model, are presented. These results show that the proposed D-ABB reduces the standard deviations of the frequency, the dynamic power, and the leakage power by factors of 5.5×, 6.4×, and 4.5×, respectively, when both D2D and WID variations are considered. In addition, in the presented case study, initial total yields of 16.8% and 13% are improved to 100% and 91.4%, respectively. The proposed D-ABB circuit exhibits lower area overhead compared to the other ABB circuits reported in the literature.
Keywords :
CMOS integrated circuits; circuit simulation; compensation; integrated circuit design; integrated circuit modelling; integrated circuit yield; leakage currents; microprocessor chips; CMOS technology transistor model; D-ABB circuit; D2D variations; WID variations; circuit block; circuit level simulation; circuit yield; die-to-die compensation; die-to-die parameter variations; dynamic power; industrial hardware; leakage power; low area overhead direct adaptive body bias circuit; microprocessor critical path; on-chip direct controller circuits; size 65 nm; standard deviations; threshold voltage estimation circuits; within-die variations compensation; CMOS integrated circuits; CMOS technology; MOSFETs; Sensors; Threshold voltage; Adaptive body bias (ABB); die-to-die (D2D); microprocessors; process variations compensation; within-die (WID); yield improvement;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2010.2060503
Filename :
5556061
Link To Document :
بازگشت