Title :
Heterojunction bipolar transistor utilising AlGaSb/GaSb alloy system
Author :
Furukawa, A. ; Mizuta, M.
Author_Institution :
NEC Corp., Kanagawa
fDate :
10/27/1988 12:00:00 AM
Abstract :
A heterojunction bipolar transistor (HBT) has been fabricated using the AlGaSb/GaSb material system for the first time. The HBT structure of 100×100 μm2 emitter size was made by mesa-etching the molecular-beam-epitaxially grown layers. The device exhibits a current gain as high as 160 at room temperature
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; heterojunction bipolar transistors; molecular beam epitaxial growth; solid-state microwave devices; AlGaSb-GaSb alloy system; HBT; III-V semiconductors; MBE; heterojunction bipolar transistor; mesa-etching; microwave device; molecular-beam-epitaxially grown layers;
Journal_Title :
Electronics Letters
