DocumentCode
1302935
Title
An 11-b 300-MS/s Double-Sampling Pipelined ADC With On-Chip Digital Calibration for Memory Effects
Author
Miki, Takuji ; Morie, Takashi ; Ozeki, Toshiaki ; Dosho, Shiro
Author_Institution
Panasonic Corp., Kadoma, Japan
Volume
47
Issue
11
fYear
2012
Firstpage
2773
Lastpage
2782
Abstract
An 11-b 300-MS/s double sampling pipelined ADC with on-chip digital calibration for memory effects is presented. In double-sampling pipelined ADC architecture, memory effect of residual charge occurs due to sharing an op-amp between two channels of pipelined ADC. The proposed foreground calibration technique removes the memory effect error in digital domain without additional analog circuit. Thus, the technique simplifies the analog circuits, which extends the operation speed over 300 MHz. The chip is fabricated in a 40 nm CMOS and occupies 0.42 mm2 including digital calibration logic. The ADC consumes 40 mW from a 1.8 V supply, and FoM is 0.24-pJ/conversion-step.
Keywords
CMOS integrated circuits; analogue-digital conversion; calibration; CMOS; FoM; analog circuits; digital domain; double-sampling pipelined ADC architecture; foreground calibration technique; memory effect error; memory effects; on-chip digital calibration logic; op-amp; pipelined ADC; power 40 mW; residual charge; size 40 nm; voltage 1.8 V; Analog circuits; Calibration; Capacitors; Equations; Mathematical model; Pipelines; System-on-a-chip; Analog-to-digital converter (ADC); digital calibration; double sampling; memory effect;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2012.2216217
Filename
6316061
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