DocumentCode :
1302935
Title :
An 11-b 300-MS/s Double-Sampling Pipelined ADC With On-Chip Digital Calibration for Memory Effects
Author :
Miki, Takuji ; Morie, Takashi ; Ozeki, Toshiaki ; Dosho, Shiro
Author_Institution :
Panasonic Corp., Kadoma, Japan
Volume :
47
Issue :
11
fYear :
2012
Firstpage :
2773
Lastpage :
2782
Abstract :
An 11-b 300-MS/s double sampling pipelined ADC with on-chip digital calibration for memory effects is presented. In double-sampling pipelined ADC architecture, memory effect of residual charge occurs due to sharing an op-amp between two channels of pipelined ADC. The proposed foreground calibration technique removes the memory effect error in digital domain without additional analog circuit. Thus, the technique simplifies the analog circuits, which extends the operation speed over 300 MHz. The chip is fabricated in a 40 nm CMOS and occupies 0.42 mm2 including digital calibration logic. The ADC consumes 40 mW from a 1.8 V supply, and FoM is 0.24-pJ/conversion-step.
Keywords :
CMOS integrated circuits; analogue-digital conversion; calibration; CMOS; FoM; analog circuits; digital domain; double-sampling pipelined ADC architecture; foreground calibration technique; memory effect error; memory effects; on-chip digital calibration logic; op-amp; pipelined ADC; power 40 mW; residual charge; size 40 nm; voltage 1.8 V; Analog circuits; Calibration; Capacitors; Equations; Mathematical model; Pipelines; System-on-a-chip; Analog-to-digital converter (ADC); digital calibration; double sampling; memory effect;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2012.2216217
Filename :
6316061
Link To Document :
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