• DocumentCode
    1302935
  • Title

    An 11-b 300-MS/s Double-Sampling Pipelined ADC With On-Chip Digital Calibration for Memory Effects

  • Author

    Miki, Takuji ; Morie, Takashi ; Ozeki, Toshiaki ; Dosho, Shiro

  • Author_Institution
    Panasonic Corp., Kadoma, Japan
  • Volume
    47
  • Issue
    11
  • fYear
    2012
  • Firstpage
    2773
  • Lastpage
    2782
  • Abstract
    An 11-b 300-MS/s double sampling pipelined ADC with on-chip digital calibration for memory effects is presented. In double-sampling pipelined ADC architecture, memory effect of residual charge occurs due to sharing an op-amp between two channels of pipelined ADC. The proposed foreground calibration technique removes the memory effect error in digital domain without additional analog circuit. Thus, the technique simplifies the analog circuits, which extends the operation speed over 300 MHz. The chip is fabricated in a 40 nm CMOS and occupies 0.42 mm2 including digital calibration logic. The ADC consumes 40 mW from a 1.8 V supply, and FoM is 0.24-pJ/conversion-step.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; calibration; CMOS; FoM; analog circuits; digital domain; double-sampling pipelined ADC architecture; foreground calibration technique; memory effect error; memory effects; on-chip digital calibration logic; op-amp; pipelined ADC; power 40 mW; residual charge; size 40 nm; voltage 1.8 V; Analog circuits; Calibration; Capacitors; Equations; Mathematical model; Pipelines; System-on-a-chip; Analog-to-digital converter (ADC); digital calibration; double sampling; memory effect;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2012.2216217
  • Filename
    6316061