• DocumentCode
    1302971
  • Title

    Si/SiGe heterostructure MITATT diode

  • Author

    Luy, J.F. ; Jorke, H. ; Kibbel, H. ; Casel, A. ; Kasper, Erich

  • Author_Institution
    AEG Res. Centre Ulm
  • Volume
    24
  • Issue
    22
  • fYear
    1988
  • fDate
    10/27/1988 12:00:00 AM
  • Firstpage
    1386
  • Lastpage
    1387
  • Abstract
    The first experimental results on Si/SiGe heterostructure mixed tunnelling avalanche transit time (MITATT) diodes are reported. The layers are grown by MBE. At 103 GHz a very low noise CW output of 25 mW is obtained. With an optimisation of the design higher output powers with still low noise operation are expected
  • Keywords
    Ge-Si alloys; avalanche diodes; elemental semiconductors; molecular beam epitaxial growth; silicon; solid-state microwave devices; transit time devices; tunnel diodes; 103 GHz; 25 mW; EHF; MBE; MITATT diode; MM-wave operation; Si-SiGe; heterostructure; low noise CW output; microwave devices; millimetre wave device; mixed tunnelling avalanche transit time; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    82456
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1302971