Title :
Si/SiGe heterostructure MITATT diode
Author :
Luy, J.F. ; Jorke, H. ; Kibbel, H. ; Casel, A. ; Kasper, Erich
Author_Institution :
AEG Res. Centre Ulm
fDate :
10/27/1988 12:00:00 AM
Abstract :
The first experimental results on Si/SiGe heterostructure mixed tunnelling avalanche transit time (MITATT) diodes are reported. The layers are grown by MBE. At 103 GHz a very low noise CW output of 25 mW is obtained. With an optimisation of the design higher output powers with still low noise operation are expected
Keywords :
Ge-Si alloys; avalanche diodes; elemental semiconductors; molecular beam epitaxial growth; silicon; solid-state microwave devices; transit time devices; tunnel diodes; 103 GHz; 25 mW; EHF; MBE; MITATT diode; MM-wave operation; Si-SiGe; heterostructure; low noise CW output; microwave devices; millimetre wave device; mixed tunnelling avalanche transit time; semiconductors;
Journal_Title :
Electronics Letters
