DocumentCode
1302998
Title
5-75 GHz common-gate subharmonic mixer in 65 nm CMOS
Author
Zhang, Fang ; yang, Bo ; Skafidas, E. ; Shieh, William
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. of Melbourne, Melbourne, VIC, Australia
Volume
46
Issue
17
fYear
2010
Firstpage
1203
Lastpage
1205
Abstract
Direct conversion architectures have the advantage of no image frequencies, fewer components and lower cost. However, local oscillator (LO) leakage reduces receiver sensitivity, causes LO pulling, and is a challenging problem for direct conversion transceiver design. Proposed is a mixer using the second-order harmonic of the LO. The proposed subharmonic mixer is based on a switching common-gate structure. This mixer, built using 65 nm CMOS technology, achieves measured voltage conversion gain better than 3 dB for frequencies between 5 to 75 GHz with a current consumption of 2 mA at 1.5 V power supply. In the 57 to 66 GHz frequency band, the LO to RF port isolation is better than 38 dB and the noise figure is 14.8 dB when driven with a 30 GHz quadrature LO input.
Keywords
CMOS integrated circuits; MIMIC; MMIC mixers; millimetre wave mixers; transceivers; CMOS technology; RF port isolation; common-gate subharmonic mixer; current 2 mA; current consumption; direct conversion transceiver design; frequency 5 GHz to 75 GHz; image frequency; local oscillator leakage; noise figure; noise figure 14.8 dB; receiver sensitivity; second-order harmonic; size 65 nm; subharmonic mixer; switching common-gate structure; voltage 1.5 V; voltage conversion gain;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.1166
Filename
5556089
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