Title :
Dopant distribution profile to improve performance of superlattice tunnel diode
Author :
Davies, R.A. ; Kelly, Michael J. ; Kerr, T.M.
Author_Institution :
GEC Res. Centre, Wembley
fDate :
10/27/1988 12:00:00 AM
Abstract :
The authors show how it is possible by careful choice of the dopant profile to improve the performance of a superlattice tunnel diode to give negative differential conductance with good current and voltage swings and a low capacitance
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; impurity distribution; negative resistance; semiconductor doping; semiconductor superlattices; tunnel diodes; GaAs-AlGaAs; III-V semiconductors; distribution profile; dopant profile; low capacitance; negative differential conductance; superlattice tunnel diode;
Journal_Title :
Electronics Letters
