DocumentCode :
1303257
Title :
Carbon Nanotube Pattern Formation—Precise Routing on Silicon Oxide Using Nanoscale Catalyst Breadboards
Author :
Papadopoulos, Chris
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Victoria, Victoria, BC, Canada
Volume :
11
Issue :
6
fYear :
2012
Firstpage :
1212
Lastpage :
1216
Abstract :
A method for directly routing single-walled carbon nanotubes on silicon dioxide is presented. The lack of a preferred direction on the amorphous oxide film was overcome by placing nanoscale catalyst particles on the surface in the form of a grid or breadboard. Colloidal lithography was used to create an ordered nanoscale array of uniformly distributed Fe/Mo catalyst particles to serve as the breadboard. Following chemical vapor deposition at 900 °C with a methane/hydrogen gas mixture, intricate nanotube patterns that corresponded to the underlying breadboard were formed. Most patterns were found to consist of individual tubes or few-tube bundles. A “lift-and-drop” model was used to describe the nanotube pattern formation process whereby a combination of gas flow and van der Waals interactions allows tube growth to be precisely guided onto the breadboards without requiring an external impetus. These results indicate a potential path to carbon nanotube integration on standard oxide films for future deep nanoscale electronics.
Keywords :
amorphous state; carbon nanotubes; catalysts; chemical vapour deposition; gas mixtures; integrated circuit manufacture; nanofabrication; nanolithography; nanopatterning; silicon compounds; thin films; C; SiO2; Van der Waals interactions; amorphous oxide film; carbon nanotube pattern formation; chemical vapor deposition; colloidal lithography; deep nanoscale electronics; directly routing single-walled carbon nanotubes; few-tube bundles; gas flow; lift-and-drop model; methane-hydrogen gas mixture; nanoscale catalyst breadboards; nanoscale catalyst particles; nanotube pattern formation process; nanotube patterns; ordered nanoscale array; precise routing; standard oxide films; temperature 900 degC; uniformly distributed catalyst particles; Arrays; Carbon nanotubes; Electron tubes; Nanoscale devices; Pattern formation; Silicon; Substrates; Carbon nanotubes (CNTs); growth; self-assembly; single walled;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2012.2221143
Filename :
6316195
Link To Document :
بازگشت