Parametric Mismatch Characterization for Mixed-Signal Technologies

Author

Tuinhout, Hans ; Wils, Nicole ; Andricciola, Pietro

Author_Institution

Central R&D, NXP Semicond., Eindhoven, Netherlands

Volume

45

Issue

9

fYear

2010

Firstpage

1687

Lastpage

1696

Abstract

Systematic and random parametric mismatches are major performance limiters as well as notorious causes for redesigns of high precision mixed-signal circuits and systems. Therefore, it is extremely important to measure, analyze, interpret, model and document parametric mismatch mechanisms meticulously for mixed-signal technologies. This paper gives an overview of the main requirements and techniques for mismatch characterization of active and passive devices in deep submicron mixed-signal IC technologies.

Keywords

integrated circuit measurement; integrated circuit modelling; mixed analogue-digital integrated circuits; active devices; deep submicron mixed-signal IC technology; document parametric mismatch mechanisms; high precision mixed-signal circuit redesign; passive devices; random parametric mismatch characterization; Current measurement; Integrated circuits; Layout; Performance evaluation; Semiconductor device measurement; Systematics; Transistors; Device modeling; matching; mismatch; random parametric mismatch fluctuations; silicon device characterization; systematic mismatch;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2010.2051478

Filename

5556420