DocumentCode :
1303422
Title :
Characterizing and Modeling Nonlinear Intermodulation Distortions in Modified Uni-Traveling Carrier Photodiodes
Author :
Fu, Yang ; Pan, Huapu ; Li, Zhi ; Beling, Andreas ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. Eng., Univ. of Virginia, Charlottesville, VA, USA
Volume :
47
Issue :
10
fYear :
2011
Firstpage :
1312
Lastpage :
1319
Abstract :
We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<;3 GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC photodiodes. The output third-order intercept point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements.
Keywords :
III-V semiconductors; indium compounds; nonlinear optics; photodiodes; Franz Keldysh effect; InGaAs-InP; modified unitraveling carrier photodiodes; nonlinear analysis; nonlinear intermodulation distortions; physics based model; third order intercept point; Electric fields; Indium gallium arsenide; Intermodulation distortion; Modulation; Photoconductivity; Photodiodes; Temperature measurement; Intermodulation distortion; nonlinear analysis; photodiode;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2011.2165700
Filename :
5993488
Link To Document :
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