DocumentCode
1303422
Title
Characterizing and Modeling Nonlinear Intermodulation Distortions in Modified Uni-Traveling Carrier Photodiodes
Author
Fu, Yang ; Pan, Huapu ; Li, Zhi ; Beling, Andreas ; Campbell, Joe C.
Author_Institution
Dept. of Electr. Eng., Univ. of Virginia, Charlottesville, VA, USA
Volume
47
Issue
10
fYear
2011
Firstpage
1312
Lastpage
1319
Abstract
We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<;3 GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC photodiodes. The output third-order intercept point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements.
Keywords
III-V semiconductors; indium compounds; nonlinear optics; photodiodes; Franz Keldysh effect; InGaAs-InP; modified unitraveling carrier photodiodes; nonlinear analysis; nonlinear intermodulation distortions; physics based model; third order intercept point; Electric fields; Indium gallium arsenide; Intermodulation distortion; Modulation; Photoconductivity; Photodiodes; Temperature measurement; Intermodulation distortion; nonlinear analysis; photodiode;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2011.2165700
Filename
5993488
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