DocumentCode :
1303470
Title :
High-Performance 
Metal–Insulator–Metal Capacitors
Author :
Mondal, Somnath ; Pan, Tung-Ming
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Gueishan, Taiwan
Volume :
32
Issue :
11
fYear :
2011
Firstpage :
1576
Lastpage :
1578
Abstract :
We fabricate the Ni/Lu2O3/TaN metal-insulator-metal capacitor with a high capacitance density of 7.5 fF/μm2, a relatively small quadratic voltage coefficient of capacitance (VCC) of 75 ppm/V2, a low leakage current of 5 × 10-8 A/cm2 at -1 V, and an excellent ten-year reliability with a very low ΔC/C of 0.51% at 3 V. These small VCC value and good reliability are attributed to a reduction of carrier injection and trapping into the dielectric.
Keywords :
MIM devices; capacitors; leakage currents; lutetium compounds; nickel alloys; nitrogen; reliability; tantalum alloys; MIM capacitor; Ni-Lu2O3-TaN; capacitance density; carrier injection reduction; carrier trapping reduction; leakage current; metal-insulator-metal capacitor; quadratic VCC; quadratic voltage coefficient of capacitance; reliability; voltage 1 V; voltage 3 V; Capacitance; Capacitors; MIM capacitors; Nickel; Reliability; Stress; $hbox{Lu}_{2}hbox{O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2163611
Filename :
5993495
Link To Document :
