Title :
Widely Tunable High-Power Tapered Diode Laser at 1060 nm
Author :
Jensen, Ole Bjarlin ; Sumpf, Bernd ; Erbert, Götz ; Petersen, Paul Michael
Author_Institution :
Dept. of Photonics Eng., Tech. Univ. of Denmark, Roskilde, Denmark
Abstract :
We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser tuning; quantum well lasers; InGaAs; narrow linewidth; near diffraction limited beam quality; single quantum well external cavity tapered diode laser; wavelength 1018 nm to 1093 nm; widely tunable high power tapered diode laser; Cavity resonators; Diode lasers; Laser beams; Measurement by laser beam; Power generation; Semiconductor lasers; Tuning; Laser tuning; quantum-well lasers; semiconductor lasers; tapered lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2011.2165702
