Title :
Planar InP/InGaAs avalanche photodetector with integrated dielectric wavelength filter
Author :
Learmouth, M.D. ; Reid, Ian
fDate :
6/7/1990 12:00:00 AM
Abstract :
Patterned bandpass dielectric interference filters with centre wavelengths around 1.3 mu m have been applied to top-entry photodiodes to produce high-speed, high-responsivity, photodetectors for wavelength division multiplexing. The measured responsivity exceeded 25 A/W with a full width half maximum of 19 nm and peak rejection of over 25 dB.
Keywords :
III-V semiconductors; avalanche photodiodes; frequency division multiplexing; gallium arsenide; indium compounds; optical communication equipment; optical filters; photodetectors; 1.3 micron; APD; InP-InGaAs; WDM; avalanche photodetector; bandpass dielectric interference filters; high-responsivity; high-speed; integrated dielectric wavelength filter; optical fibre communication; patterned filters; planar photodetectors; top-entry photodiodes; wavelength division multiplexing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900525
