Title :
High performance submicron pseudo-MODFETs and 2:1 multiplexers using GaAs on InP heteroepitaxial technology
Author :
Lo, Y.H. ; Bagheri, Mehdi ; Lin, P.S.D. ; Grabbe, P. ; Bhat, Ritesh ; Stoffel, N.G. ; Lee, T.P.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
6/7/1990 12:00:00 AM
Abstract :
High performance 0.5 mu m gate length InGaAs/GaAs pseudo-MODFETs are demonstrated on InP substrates by MOVPE heteroepitaxial growth. The transistors show a 300 mS/mm transconductance and a 30 GHz cutoff frequency. A 2:1 multiplexer is also made using the same technology. Preliminary testing indicates that the multiplexer can operate up to 10 Gbit/s.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated logic circuits; multiplexing equipment; solid-state microwave devices; vapour phase epitaxial growth; 2:1 multiplexers; 30 GHz; 300 mS; AlGaAs-InGaAs-GaAs-InP; InP substrates; MOVPE; SCFL; heteroepitaxial technology; source-coupled FET logic; submicron pseudo-MODFETs; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900527
