Experimental study of microwave reflection gain of AlAs/GaAs/AlAs quantum well structures

Author

Stapleton, S.P. ; Deen, M.J. ; Berolo, E. ; Hardy, R.H.S.

Author_Institution

Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada

Volume

26

Issue

2

fYear

1990

Firstpage

84

Lastpage

85

Abstract

Reports on microwave reflection gain measurements on single quantum well AlAs/GaAs/AlAs resonant tunnelling structures. Reflection gain against frequency measurements in the 0.050-26.5 GHz range were performed. The equivalent negative high-frequency resistance and capacitance as a function of frequency were determined for a diode of area 49 mu m². The point at which the reflection gain exceeds unity (0 dB) is noted to be the onset of possible oscillations, and thus yields a negative resistance.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; negative resistance effects; semiconductor quantum wells; solid-state microwave devices; tunnel diodes; 0.05 to 26.5 GHz; AlAs-GaAs-AlAs; SHF; area; diode; equivalent capacitance; equivalent negative high-frequency resistance; frequency response; function of frequency; microwave reflection gain measurements; negative resistance; onset of possible oscillations; quantum well diodes; quantum well structures; reflection gain exceeds unity; resonant tunnelling structures; semiconductors; single quantum well;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19900056

Filename

82472