• DocumentCode
    1303632
  • Title

    Models of boron redistribution during thermal oxidation with general oxidation rate

  • Author

    Suzuki, Kunihiro ; Miyashita, Toshihiko

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    47
  • Issue
    3
  • fYear
    2000
  • fDate
    3/1/2000 12:00:00 AM
  • Firstpage
    523
  • Lastpage
    528
  • Abstract
    It has been shown that the redistribution of boron in SiO2 is negligible in the practical temperature range between 900 and 1100°C. Utilizing this fact, we derived a model for boron redistribution with a general oxidation rate, and obtained close agreement between experimental and theoretical data
  • Keywords
    diffusion; elemental semiconductors; impurity distribution; leakage currents; oxidation; semiconductor-insulator boundaries; silicon; silicon compounds; 900 to 1100 degC; Si-SiO2; diffusion coefficient; dopant redistribution; leakage current; oxidation rate; thermal oxidation; threshold voltage; Analytical models; Boron; Degradation; Impurities; Leakage current; Oxidation; Predictive models; Surface fitting; Temperature distribution; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.824721
  • Filename
    824721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1303632