Numerical simulation of neutron radiation effects in avalanche photodiodes

Author

Osborne, M.D. ; Hobson, P.R. ; Watts, S.J.

Author_Institution

Dept. of Electron. & Comput. Eng., Brunel Univ., Uxbridge, UK

Volume

47

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

529

Lastpage

536

Abstract

A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. The model includes impact ionization and illumination allowing accurate simulation with minimal assumptions. The effect of neutron radiation damage is incorporated via the introduction of deep acceptor levels subject to Shockley-Read-Hall statistics. Preliminary analysis of an EG&G reverse APD structure is compared with experimental data from a commercial EG&G C30719F APD.

Keywords

avalanche photodiodes; deep levels; elemental semiconductors; finite difference methods; impact ionisation; neutron effects; semiconductor device models; silicon; 1D device model; Shockley-Read-Hall statistics; Si; avalanche photodiodes; deep acceptor levels; finite difference technique; impact ionization; neutron radiation effects; reverse APD structure; time-independent semiconductor equations; user specified structure; Neutron radiation effects;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.824722

Filename

824722