Title :
Theoretical analysis of the detectivity in N-p and P-n GaSb/GaInAsSb infrared photodetectors
Author :
Tian, Yuan ; Zhang, Baolin ; Zhou, Tianming ; Jiang, Hong ; Jin, Yixin
Author_Institution :
Inst. of Phys., Acad. Sinica, Changchun, China
fDate :
3/1/2000 12:00:00 AM
Abstract :
In this paper, the detectivity as well as the quantum efficiency and the zero-bias resistance-area product in N-p and P-n GaSb/Ga0.8 In0.2As0.19Sb0.81 infrared detectors is analyzed, based on the incident wavelength and the parameters of GaSb and Ga0.8In0.2As0.19Sb0.81. The results show that the detectivity for the N-p structure is much higher than that for the P-n structure. In addition, the tunneling mechanism in both heterostructures strongly decreases the performance of Ga0.8 In0.2As0.19Sb0.81/GaSb detectors, The optimum detectivity is obtained when the zero-bias resistance-area product is limited by the generation-recombination mechanism. Furthermore, the detectivity in the N-p heterostructure is saturated with a small thickness of p-Ga0.8In0.2As0.19 Sb0.81 while the one in the P-n heterostructure is maximum with thickness of n-Ga0.8In0.2As0.19 Sb0.81 in the range of 2.5-3 μm
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; infrared detectors; narrow band gap semiconductors; tunnelling; wide band gap semiconductors; 2.5 to 3 micrometre; GaSb-GaInAsSb; detectivity; generation-recombination mechanism; incident wavelength; infrared photodetectors; quantum efficiency; tunneling mechanism; zero-bias resistance-area product; Charge carrier processes; Conducting materials; Electron mobility; Heterojunctions; Infrared detectors; Optical surface waves; Photodetectors; Radiative recombination; Semiconductor materials; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
