DocumentCode
1303664
Title
Asymmetric Tunnel Field-Effect Transistors as Frequency Multipliers
Author
Madan, Himanshu ; Saripalli, Vinay ; Liu, Huichu ; Datta, Suman
Author_Institution
Pennsylvania State Univ., University Park, PA, USA
Volume
33
Issue
11
fYear
2012
Firstpage
1547
Lastpage
1549
Abstract
This letter proposes a novel application of asymmetric (double-gate) tunnel field-effect transistors (asymmetric TFETs) as a frequency multiplier. Work-function tuning of an asymmetric TFET was used to demonstrate symmetric ambipolar transfer characteristics by TCAD simulation. Unlike the conventional balanced FET-based multiplier, the asymmetric TFET design needs only one transistor for rejecting odd harmonics. Advanced design system simulations are used to compare the performance of an n-type FET and an asymmetric TFET frequency multiplier.
Keywords
field effect transistors; frequency multipliers; tunnel transistors; TCAD simulation; advanced design system simulations; asymmetric TFET design; asymmetric TFET frequency multiplier; asymmetric tunnel field-effect transistors; balanced FET-based multiplier; double-gate tunnel field-effect transistors; n-type FET; odd harmonic rejection; symmetric ambipolar transfer characteristics; Electron multipliers; FETs; Harmonic analysis; Mixers; Tunneling; Ambipolar TFET; asymmetric TFET; band-to-band tunneling; frequency multiplier; mixer;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2214201
Filename
6317134
Link To Document