• DocumentCode
    1303664
  • Title

    Asymmetric Tunnel Field-Effect Transistors as Frequency Multipliers

  • Author

    Madan, Himanshu ; Saripalli, Vinay ; Liu, Huichu ; Datta, Suman

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • Volume
    33
  • Issue
    11
  • fYear
    2012
  • Firstpage
    1547
  • Lastpage
    1549
  • Abstract
    This letter proposes a novel application of asymmetric (double-gate) tunnel field-effect transistors (asymmetric TFETs) as a frequency multiplier. Work-function tuning of an asymmetric TFET was used to demonstrate symmetric ambipolar transfer characteristics by TCAD simulation. Unlike the conventional balanced FET-based multiplier, the asymmetric TFET design needs only one transistor for rejecting odd harmonics. Advanced design system simulations are used to compare the performance of an n-type FET and an asymmetric TFET frequency multiplier.
  • Keywords
    field effect transistors; frequency multipliers; tunnel transistors; TCAD simulation; advanced design system simulations; asymmetric TFET design; asymmetric TFET frequency multiplier; asymmetric tunnel field-effect transistors; balanced FET-based multiplier; double-gate tunnel field-effect transistors; n-type FET; odd harmonic rejection; symmetric ambipolar transfer characteristics; Electron multipliers; FETs; Harmonic analysis; Mixers; Tunneling; Ambipolar TFET; asymmetric TFET; band-to-band tunneling; frequency multiplier; mixer;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2214201
  • Filename
    6317134