Title :
Physical modeling of spiral inductors on silicon
Author :
Yue, C. Patrick ; Wong, S. Simon
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
3/1/2000 12:00:00 AM
Abstract :
This paper presents a physical model for planar spiral inductors on silicon, which accounts for eddy current effect in the conductor, crossover capacitance between the spiral and center-tap, capacitance between the spiral and substrate, substrate ohmic loss, and substrate capacitance. The model has been confirmed with measured results of inductors having a wide range of layout and process parameters. This scalable inductor model enables the prediction and optimization of inductor performance
Keywords :
UHF integrated circuits; capacitance; eddy currents; elemental semiconductors; inductors; integrated circuit design; silicon; Si; crossover capacitance; eddy current effect; inductor performance; layout parameters; optimization; physical model; planar spiral inductors; process parameters; substrate capacitance; substrate ohmic loss; Capacitance; Eddy currents; Electric resistance; Inductance; Inductors; Integrated circuit modeling; Radio frequency; Silicon; Spirals; Wire;
Journal_Title :
Electron Devices, IEEE Transactions on
